FF400R12KT3HOSA1 Application Note - Infineon

Trans IGBT Module N-CH 1200V 580A 2000000mW 7Pin 62MM Tray

Insulated Gate Bipolar Transistor, 580A I(C), 1200V V(BR)CES, N-Channel, MODULE-7

Our well-known 62mm 1200V Common Emitter IGBT modules with common emitter and fast trench/fieldstop IGBT3. 3-level phase leg configurations are possible in combination with our 1200V 62mm dual modules (e.g. FF400R12KT3) This product is also available with Thermal Interface Material pre-applied: FF400R12KT3P_E

Our well-known 62mm 1200V Common Emitter IGBT modules with fast trench/fieldstop IGBT3 and pre-applied Thermal Interface Material. 3-level phase leg configurations are possible in combination with our 1200V 62mm dual modules (e.g. FF400R12KT3).

Our well-known 62mm 1200V dual IGBT modules with fast trench/fieldstop IGBT3 and Emitter Controlled High Efficiency diode are the right choice for your design.

Our well-known 62mm 1200V Common Emitter IGBT modules with common emitter and fast trench/fieldstop IGBT3. 3-level phase leg configurations are possible in combination with our 1200V 62mm dual modules (e.g. FF400R12KT3) This product is also available with Thermal Interface Material pre-applied: FF400R12KT3P_E