FF650R17IE4DP_B2 Application Note - Infineon

INFINEON FF650R17IE4 IGBT Array & Module Transistor, PrimePACK™2, N Channel, 650A, 2V, 4.15kW, 1.7kV, Module

Insulated Gate Bipolar Transistor, 930A I(C), 1700V V(BR)CES, N-Channel, MODULE-8

INFINEON FF650R17IE4D_B2 IGBT Array & Module Transistor, N Channel, 650A, 2V, 4.15kW, 1.7kV, Module

1700V PrimePACK™2 dual IGBT module especially developed for CAV applications. Including IGBT4 and NTC.

1700V PrimePACK™2 dual IGBT module with IGBT4, NTC and pre-applied Thermal Interface Material.

1700V PrimePACK™2 dual IGBT module especially developed for CAV applications. Including IGBT4 and NTC.

Trans IGBT Module N-CH 1700V 930A 4150000mW 10Pin PRIME2-1 Tray

1700V PrimePACK™2 dual IGBT module with IGBT4, NTC and pre-applied Thermal Interface Material.

1700V PrimePACK2 dual IGBT module with IGBT4 and NTC. | Summary of Features: Extended Operation Temperature T(tvj op)...