IKW75N65EH5 Application Note - Infineon

Infineon’s new L5 low saturation voltage (V CE(sat)) TRENCHSTOP™ IGBT family has been specifically optimized for low switching frequencies ranging from 50Hz to 20kHz. Optimization of the carrier profile of the innovative 55µm TRENCHSTOP™ 5 thin wafer technology allows to reduce conduction losses to the intrinsically low level – 1.05V for 30A IGBT and 1.1V for 75A IGBT.

Trans IGBT Chip N-CH 650V 80A 395000mW 3Pin(3+Tab) TO-247 Tube

650V DuoPack IGBT and full-rated diode High speed series fifth generation

Infineon’s new L5 low saturation voltage (V CE(sat)) TRENCHSTOP™ IGBT family has been specifically optimized for low switching frequencies ranging from 50Hz to 20kHz. Optimization of the carrier profile of the innovative 55µm TRENCHSTOP™ 5 thin wafer technology allows to reduce conduction losses to the intrinsically low level – 1.05V for 30A IGBT and 1.1V for 75A IGBT.

Trans IGBT Chip N-CH 650V 90A 395000mW 3Pin(3+Tab) TO-247 Tube