MRF6V12250HR3 Application Note - NXP

RF Power Transistor,960 to 1215MHz, 275W, Typ Gain in dB is 20.3 @ 1030MHz, 50V, LDMOS, SOT1793

RF Power Transistor,960 to 1215MHz, 275W, Typ Gain in dB is 20.3 @ 1030MHz, 50V, LDMOS, SOT1792

MOSFET RF N-CH 250W 50V NI-780S

MOSFET RF N-CH 250W 50V NI-780

Pulsed Lateral N-Channel RF Power MOSFET, 960-1215MHz, 275W, 50V

Pulsed Lateral N-Channel RF Power MOSFET, 960-1215MHz, 275W, 50V

MOSFET RF N-CH 250W 50V NI-780

MOSFET RF N-CH 250W 50V NI-780S