MRF6V2150N Application Note - NXP

NXP MRF6V2150NR1 RF FET Transistor, 110V, 2.5mA, 150W, 10MHz, 450MHz, TO-272

RF Power Transistor,10 to 450MHz, 150W, Typ Gain in dB is 25 @ 220MHz, 50V, LDMOS, SOT1735

Trans RF MOSFET N-CH 110V 5Pin TO-272W T/R

Trans RF MOSFET N-CH 110V 5Pin TO-270W T/R

Trans RF MOSFET N-CH 110V 5Pin TO-272W T/R

Trans RF MOSFET N-CH 110V 5Pin TO-272W T/R

Lateral N-Channel Single-Ended Broadband RF Power MOSFET, 10-450MHz, 150W, 50V

Lateral N-Channel Single-Ended Broadband RF Power MOSFET, 10-450MHz, 150W, 50V

RF Power Field-Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs