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MW6S004N Application Note - NXP

Manufacturer:

NXP

Case Package:

PLD-3

Description:

Lateral N-Channel RF Power MOSFET, 1-2000MHz, 4W, 28V

Pictures:

3D Model

Symbol

Footprint

Pinout

Product Pictures

Pages guide:

Block Diagram onP2P3

Package Outline Dimension onP11

Packaging Infomation onP1

Specifications onP1

Electrical Specification onP2

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MW6S004N Documents

NXP

3 Pages / 0.04 MByte

NXP

13 Pages / 0.53 MByte

NXP

RF Power Transistor,1 to 2000MHz, 4W, Typ Gain in dB is 18 @ 1960MHz, 28V, LDMOS, SOT1811

Freescale

MOSFET RF N-CH 28V 4W PLD-1.5

NXP

Lateral N-Channel RF Power MOSFET, 1-2000MHz, 4W, 28V

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File format: *.xlsx, *.xls, *.csv