MW6S010GNR1 Application Note - NXP

RF Power Field Effect Transistor

NXP MW6S010GNR1 RF FET Transistor, 68V, 10W, 450MHz, 1.5GHz, TO-270

RF Power Transistor,450 to 1500MHz, 10W, Typ Gain in dB is 18 @ 960MHz, 28V, LDMOS, SOT1732

MOSFET RF N-CH 28V 10W TO270-2GW

MOSFET RF N-CH 28V 10W TO270-2

Trans RF MOSFET N-CH 68V 3Pin TO-270 GULL T/R

FET RF 68V 960MHz TO-270-2

MOSFET RF N-CH 28V 10W TO270-2GW

MOSFET RF N-CH 28V 10W TO270-2GW