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Part Datasheet Search > BJTs > Semelab > 2N2222ACSM Datasheet PDF
2N2222ACSM
$ 36.625
2N2222ACSM Datasheet PDF (3 Pages)
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2N2222ACSM Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
3 Pin
Case/Package
CLLCC-1
Number of Positions
3 Position
Polarity
NPN
Power Dissipation
500 mW
Gain Bandwidth Product
300 MHz
hFE Min
50
DC Current Gain (hFE)
100
Operating Temperature (Max)
200 ℃
Operating Temperature (Min)
-65 ℃
Power Dissipation (Max)
500 mW

2N2222ACSM Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Bulk
Size-Length
3.05 mm
Size-Width
2.54 mm
Size-Height
1.4 mm
Operating Temperature
-65℃ ~ 200℃

2N2222ACSM Documents

Semelab
3 Pages / 0.26 MByte
Semelab
3 Pages / 0.23 MByte
Semelab
1 Pages / 0.03 MByte

2N2222 Documents

Multicomp
Bipolar (BJT) Single Transistor, NPN, 30V, 250MHz, 0.5W(1/2W), 800mA, 100 hFE
Central Semiconductor
Trans GP BJT NPN 30V 0.8A 3Pin TO-18 Box
ST Microelectronics
Bipolar (BJT) Single Transistor, NPN, 30V, 250MHz, 0.5W(1/2W), 800mA, 100 hFE
ON Semiconductor
Trans GP BJT NPN 30V 0.8A 3Pin TO-18
National Semiconductor
General Purpose Applications, 60V, 600mA, 330mW, B= 100~300, > 250MHz
Micro Commercial Components
TO-18 Metal Can TransistorsP
Fairchild
Transistor NPN 2N2222 TUNGSRAM miliampere=800V=30 TO18
Philips
NPN switching transistors
Continental Device
0.5W(1/2W) General Purpose NPN Metal Can Transistor. 30V Vceo, 0.8A Ic, 30 hFE.
Semicoa Semiconductor
Chip: geometry 0400; polarity NPN
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