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Part Datasheet Search > BJTs > ON Semiconductor > 2N5885G Datasheet PDF
2N5885G
$ 7.696
2N5885G Datasheet PDF (6 Pages)
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2N5885G Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Frequency
4 MHz
Number of Pins
2 Pin
Voltage Rating (DC)
60.0 V
Current Rating
600 mA
Case/Package
TO-204-2
Number of Positions
2 Position
Polarity
NPN
Power Dissipation
200 W
Breakdown Voltage (Collector to Emitter)
60 V
Thermal Resistance
0.875℃/W (RθJC)
Continuous Collector Current
25A
hFE Min
20
hFE Max
100
Input Power (Max)
200 W
DC Current Gain (hFE)
4
Operating Temperature (Max)
200 ℃
Operating Temperature (Min)
-65 ℃
Power Dissipation (Max)
200000 mW

2N5885G Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tray
Material
Silicon
Size-Length
39.37 mm
Size-Width
26.67 mm
Size-Height
8.51 mm
Operating Temperature
-65℃ ~ 200℃

2N5885G Documents

ON Semiconductor
6 Pages / 0.09 MByte
ON Semiconductor
11 Pages / 0.87 MByte
ON Semiconductor
1 Pages / 0.03 MByte
ON Semiconductor
1 Pages / 0.16 MByte

2N5885 Documents

ON Semiconductor
TO-204-2 NPN 60V 25A
Central Semiconductor
Trans GP BJT NPN 60V 25A 3Pin(2+Tab) TO-3 Sleeve
Motorola
TRANS NPN 60V 25A TO-3
Microsemi
PNP POWER TRANSISTOR SILICON AMP
Microchip
PNP POWER TRANSISTOR SILICON AMP
ST Microelectronics
25A, 60V, NPN, Si, POWER TRANSISTOR, TO-3
Mospec
POWER TRANSISTORS(25A,200W)
Advanced Semiconductor
Power Bipolar Transistor, 25A I(C), 1-Element, NPN, Silicon, TO-3, Metal, 2 Pin, TO-3, 2 PIN
Harris
Power Bipolar Transistor, 25A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-204AA, Metal, 2 Pin
TI
20A, 60V, NPN, Si, POWER TRANSISTOR, TO-3
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