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Part Datasheet Search > BJTs > ROHM Semiconductor > 2SA854STPQ Datasheet PDF
2SA854STPQ
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2SA854STPQ Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Voltage Rating (DC)
-32.0 V
Current Rating
-500 mA
Case/Package
SC-72
Polarity
PNP
Power Dissipation
300 mW
Gain Bandwidth Product
200 MHz
Breakdown Voltage (Collector to Emitter)
32 V
Continuous Collector Current
0.5A
hFE Min
120 @100mA, 3V
hFE Max
120 @100mA, 3V
Input Power (Max)
300 mW
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
55 ℃

2SA854STPQ Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Obsolete
Packaging
Tape & Box (TB)
Size-Length
4 mm
Size-Width
2 mm
Size-Height
3 mm
Operating Temperature
150℃ (TJ)

2SA854STPQ Documents

ROHM Semiconductor
4 Pages / 0.06 MByte
ROHM Semiconductor
4 Pages / 0.07 MByte

2SA854 Documents

ROHM Semiconductor
Medium Power Transistor (-32V/ -0.5A)D
ROHM Semiconductor
SPT PNP 32V 0.5A
ROHM Semiconductor
SPT PNP 32V 0.5A
ROHM Semiconductor
Transistors > Small Signal Bipolar Transistors(up to 0.6W)d
CJ
TO-92S PNP 32V 500mA
ROHM Semiconductor
SPT PNP 32V 0.5A
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