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BPV11F Datasheet PDF - Vishay Semiconductor

Manufacturer:

Vishay Semiconductor

Category:

Phototransistor

Case Package:

T-1

Description:

BPV11F 30deg IR Phototransistor, Through Hole 2Pin 5mm (T-1 3/4) package

Pictures:

3D Model

Symbol

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Pinout

Product Pictures

Documentation:

BPV11F Datasheet (5 Pages)

Package Outline Dimension on4 Page

Part Numbering System on1 Page

BPV11F Datasheet PDF (5 Pages)

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BPV11F Specifications

TYPE

DESCRIPTION

Mounting Style

Through Hole

Number of Pins

3 Pin

Supply Voltage (DC)

5.00 V

Current Rating

50.0 mA

Case/Package

T-1

Rise/Fall Time

6 ns

Number of Channels

1 Channel

Number of Positions

3 Position

Wavelength

930 nm

Viewing Angle

15°

Peak Wavelength

930 nm

Polarity

NPN

Power Dissipation

150 mW

Power Consumption

150 mW

Rise Time

6 µs

Breakdown Voltage (Collector to Emitter)

70 V

Input Power (Max)

150 mW

Fall Time

5 µs

Operating Temperature (Max)

100 ℃

Operating Temperature (Min)

-40 ℃

Power Dissipation (Max)

150 mW

View Datasheet >

BPV11F Size & Package

TYPE

DESCRIPTION

Product Lifecycle Status

Active

Packaging

Each

Material

Silicon

Size-Length

5.75 mm

Size-Width

5.75 mm

Size-Height

8.6 mm

Operating Temperature

-40℃ ~ 100℃ (TA)

View Datasheet >

BPV11F Environmental

BPV11F Function Overview

BPV11F Documents

BPV11F Datasheet

Vishay Semiconductor

5 Pages / 0.1 MByte

BPV11F Other Datasheet PDF

Vishay Semiconductor

7 Pages / 0.14 MByte

BPV11F Product Catalog

Vishay Semiconductor

6 Pages / 0.09 MByte

BPV11F Other References

Vishay Semiconductor

1 Pages / 0.16 MByte

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