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BS108ZL1G
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BS108ZL1G Datasheet PDF (3 Pages)
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BS108ZL1G Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Voltage Rating (DC)
200 V
Current Rating
250 mA
Case/Package
TO-92-3
Drain to Source Resistance (on) (Rds)
8.00 Ω
Polarity
N-Channel
Power Dissipation
350 mW
Drain to Source Voltage (Vds)
200 V
Breakdown Voltage (Drain to Source)
200 V
Breakdown Voltage (Gate to Source)
±20.0 V
Continuous Drain Current (Ids)
250 mA
Input Capacitance (Ciss)
150pF @25V(Vds)
Input Power (Max)
350 mW
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
350mW (Ta)

BS108ZL1G Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tape & Box (TB)
Size-Length
5.2 mm
Size-Width
4.19 mm
Size-Height
5.33 mm
Operating Temperature
-55℃ ~ 150℃ (TJ)

BS108ZL1G Documents

ON Semiconductor
3 Pages / 0.08 MByte
ON Semiconductor
9 Pages / 0.19 MByte

BS108ZL1 Documents

ON Semiconductor
TO-92Ammo N-CH 200V 0.25A
Motorola
Small Signal Field-Effect Transistor, 0.25A I(D), 200V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92, TO-226AA, 3 PIN
ON Semiconductor
Trans MOSFET N-CH 200V 0.25A 3Pin TO-92 Ammo
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