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IRF7456PBF
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IRF7456PBF Datasheet PDF (1 Pages)
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IRF7456PBF Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
8 Pin
Voltage Rating (DC)
20.0 V
Current Rating
16.0 A
Case/Package
SOIC-8
Drain to Source Resistance (on) (Rds)
6.5 mΩ
Polarity
N-Channel
Power Dissipation
2.5 W
Part Family
IRF7456
Threshold Voltage
2 V
Drain to Source Voltage (Vds)
20 V
Breakdown Voltage (Drain to Source)
20.0 V
Continuous Drain Current (Ids)
16.0 A
Rise Time
25 ns
Input Capacitance (Ciss)
3640pF @15V(Vds)
Input Power (Max)
2.5 W
Fall Time
52 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
2500 mW

IRF7456PBF Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tube
Operating Temperature
-55℃ ~ 150℃

IRF7456PBF Documents

International Rectifier
1 Pages / 0.71 MByte

IRF7456 Documents

International Rectifier
Trans MOSFET N-CH 20V 16A 8Pin SOIC
Infineon
SOIC N-CH 20V 16A
IRF
Power MOSFET(Vdss=20V, Rds(on)max=0.0065Ω, Id=16A)
Infineon
SOIC N-CH 20V 16A
International Rectifier
MOSFET, Power; N-Ch; VDSS 20V; RDS(ON) 0.0047Ω; ID 16A; SO-8; PD 2.5W; VGS +/-12V; -55
Infineon
SOIC N-CH 20V 16A
International Rectifier
Trans MOSFET N-CH 20V 16A 8Pin SOIC Tube
International Rectifier
20V Single N-Channel HEXFET Power MOSFET in a SO-8 package
Infineon
SOIC N-CH 20V 16A
Infineon
SOIC N-CH 20V 16A
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