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CSD18514Q5AT
$ 1.076
CSD18514Q5AT Datasheet PDF (13 Pages)
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CSD18514Q5AT Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
8 Pin
Case/Package
VSONP-8
Number of Positions
8 Position
Drain to Source Resistance (on) (Rds)
0.0041 Ω
Polarity
N-Channel
Power Dissipation
74 W
Threshold Voltage
1.8 V
Drain to Source Voltage (Vds)
40 V
Rise Time
22 ns
Input Capacitance (Ciss)
2683pF @20V(Vds)
Fall Time
6 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
74W (Tc)

CSD18514Q5AT Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tape & Reel (TR)
Material
Silicon
Operating Temperature
-55℃ ~ 150℃ (TJ)

CSD18514Q5AT Documents

TI
13 Pages / 0.43 MByte
TI
13 Pages / 0.43 MByte

CSD18514Q5 Documents

TI
TEXAS INSTRUMENTS CSD18514Q5AT MOSFET Transistor, N Channel, 89A, 40V, 0.0041Ω, 10V, 1.8V New
TI
Trans MOSFET N-CH Si 40V 50A 8Pin VSONP EP T/R
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