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FDMD8530 Datasheet PDF - ON Semiconductor

Manufacturer:

ON Semiconductor

Case Package:

QFN-8

Description:

Trans MOSFET N-CH 30V 35A 8Pin PQFN EP T/R

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FDMD8530 Datasheet PDF (11 Pages)

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FDMD8530 Specifications

TYPE

DESCRIPTION

Mounting Style

Surface Mount

Number of Pins

8 Pin

Case/Package

QFN-8

Number of Positions

8 Position

Power Dissipation

2.2 W

Threshold Voltage

1.5 V

Drain to Source Voltage (Vds)

30 V

Rise Time

13 ns

Input Capacitance (Ciss)

7425pF @15V(Vds)

Input Power (Max)

2.2 W

Fall Time

21 ns

Operating Temperature (Max)

150 ℃

Operating Temperature (Min)

-55 ℃

Power Dissipation (Max)

2200 mW

FDMD8530 Size & Package

TYPE

DESCRIPTION

Product Lifecycle Status

Active

Packaging

Tape & Reel (TR)

Operating Temperature

-55℃ ~ 150℃ (TJ)

FDMD8530 Environmental

FDMD8530 Function Overview

FDMD8530 Documents

FDMD8530 Other Datasheet PDF

ON Semiconductor

11 Pages / 0.64 MByte

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