FDZ193P Datasheet PDF - ON Semiconductor

●Designed on Fairchild"s advanced 1.7V PowerTrench® process with state of the art "low pitch" WLCSP packaging process, the FDZ193P minimizes both PCB space and r. This advanced WLCSP MOSFET embodies a breakthrough in packaging technology which enables the device to combine excellent thermal transfer characteristics, ultra-low profile packaging, low gate charge, and low r

●Features

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● Max rDS(on) = 90mΩ at VGS = -4.5V, ID = -1A

● Max rDS(on) = 130mΩ at VGS = -2.5V, ID = -1A

● Max rDS(on) = 300mΩ at VGS = -1.7V, ID = -1A

● Occupies only 1.5 mm² of PCB area Less than 50% of the area of 2 x 2 BGA

● Ultra-thin package: less than 0.65 mm height when mounted to PCB

● RoHS Compliant