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FGAF40S65AQ Datasheet PDF - ON Semiconductor

Manufacturer:

ON Semiconductor

Case Package:

TO-3-3

Description:

Trans IGBT Chip N-CH 650V 80A 64000mW 3-Pin(3+Tab) TO-3PF Tube

Pictures:

3D Model

Symbol

Footprint

Pinout

Product Pictures

Documentation:

FGAF40S65AQ Datasheet (9 Pages)

FGAF40S65AQ Specifications

TYPE

DESCRIPTION

Mounting Style

Through Hole

Number of Pins

3 Pin

Case/Package

TO-3-3

Number of Positions

3 Position

Power Dissipation

94 W

Breakdown Voltage (Collector to Emitter)

650 V

Reverse recovery time

274 ns

Input Power (Max)

94 W

Operating Temperature (Max)

175 ℃

Operating Temperature (Min)

-55 ℃

Power Dissipation (Max)

64000 mW

View Datasheet >

FGAF40S65AQ Size & Package

TYPE

DESCRIPTION

Product Lifecycle Status

Active

Packaging

Tube

Operating Temperature

-55℃ ~ 175℃ (TJ)

View Datasheet >

FGAF40S65AQ Environmental

FGAF40S65AQ Function Overview

FGAF40S65AQ Documents

FGAF40S65AQ Datasheet

ON Semiconductor

9 Pages / 0.41 MByte

FGAF40S65AQ Other Datasheet PDF

ON Semiconductor

3 Pages / 0.01 MByte

FGAF40S65AQ Notice File

ON Semiconductor

21 Pages / 0.73 MByte

FGAF40S65 Documents

FGAF40S65AQ Datasheet PDF

ON Semiconductor

Trans IGBT Chip N-CH 650V 80A 64000mW 3-Pin(3+Tab) TO-3PF Tube

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