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FGY75T120SQDN Datasheet PDF - ON Semiconductor

Manufacturer:

ON Semiconductor

Case Package:

TO-247-3

Description:

Trans IGBT Chip N-CH 1200V 150A 790000mW 3-Pin(3+Tab) TO-247 Tube

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FGY75T120SQDN Datasheet PDF

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FGY75T120SQDN Specifications

TYPE

DESCRIPTION

Mounting Style

Through Hole

Number of Pins

3 Pin

Case/Package

TO-247-3

Number of Positions

3 Position

Power Dissipation

790 W

Breakdown Voltage (Collector to Emitter)

1200 V

Reverse recovery time

99 ns

Input Power (Max)

790 W

Operating Temperature (Max)

175 ℃

Operating Temperature (Min)

-55 ℃

Power Dissipation (Max)

790000 mW

FGY75T120SQDN Size & Package

TYPE

DESCRIPTION

Product Lifecycle Status

Active

Packaging

Tube

Operating Temperature

-55℃ ~ 175℃ (TJ)

FGY75T120SQDN Environmental

FGY75T120SQDN Function Overview

FGY75T120SQDN Documents

FGY75T120SQDN Other Datasheet PDF

ON Semiconductor

17 Pages / 2 MByte

FGY75T120SQDN Notice File

ON Semiconductor

18 Pages / 3.05 MByte

FGY75T120 Documents

FGY75T120SQDN Datasheet PDF

ON Semiconductor

Trans IGBT Chip N-CH 1200V 150A 790000mW 3-Pin(3+Tab) TO-247 Tube

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