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Part Datasheet Search > MOSFETs > Fairchild > FQB11N40CTM Datasheet PDF
FQB11N40CTM
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FQB11N40CTM Datasheet PDF (8 Pages)
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FQB11N40CTM Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
3 Pin
Voltage Rating (DC)
400 V
Current Rating
10.5 A
Case/Package
TO-263-3
Number of Channels
1 Channel
Drain to Source Resistance (on) (Rds)
500 mΩ
Polarity
N-Channel
Power Dissipation
135 W
Drain to Source Voltage (Vds)
400 V
Breakdown Voltage (Drain to Source)
400 V
Breakdown Voltage (Gate to Source)
±30.0 V
Continuous Drain Current (Ids)
10.5 A
Rise Time
89 ns
Input Capacitance (Ciss)
1090pF @25V(Vds)
Input Power (Max)
135 W
Fall Time
81 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
135W (Tc)

FQB11N40CTM Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tape & Reel (TR)
Size-Length
10.67 mm
Size-Width
9.65 mm
Size-Height
4.83 mm
Operating Temperature
-55℃ ~ 150℃ (TJ)

FQB11N40CTM Documents

Fairchild
8 Pages / 0.94 MByte
Fairchild
18 Pages / 0.94 MByte

FQB11N40 Documents

Fairchild
400V N-Channel MOSFET
ON Semiconductor
Power MOSFET, N-Channel, QFET®, 400 V, 10.5 A, 530 mΩ, D2PAK, 800-REEL
ON Semiconductor
N-Channel QFET® MOSFET 400V, 10.5A, 530mΩ
Fairchild
Trans MOSFET N-CH 400V 10.5A 3Pin(2+Tab) D2PAK T/R
Fairchild
11.4A 400V 0.48Ω N-CHAN PMOS TO-263AB
Freescale
MOSFET N-CH 400V 10.5A D2PAK
Fairchild
400V N-Channel MOSFET
ON Semiconductor
MOSFET N-CH 400V 11.4A D2PAK
ON Semiconductor
Power Field-Effect Transistor, 10.5A I(D), 400V, 0.53ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
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