FQB11P06TM Datasheet PDF - Fairchild

●Description

●This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies,

●audio amplifier, DC motor control, and variable switching power applications.

●Features

●• -11.4 A, -60 V, RDS(on) = 175 mΩ (Max) @VGS = -10 V,ID = -5.7 A

●• Low Gate Charge (Typ. 13 nC)

●• Low Crss (Typ. 45 pF)

●• 100% Avalanche Tested

●• 175°C Maximum Junction Temperature Rating