FQU10N20C Datasheet PDF - Fairchild

●General Description

●These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary,

●planar stripe, DMOS technology.

●Features

●• 7.8 A,200 V, RDS(on) = 360 mΩ (Max.)@ VGS = 10 V, ID= 3.9 A

●• Low Gate Charge (Typ.  20 nC)

●• Low Crss (Typ. 40.5pF)

●• 100% Avalanche Tested