HGTD7N60C3S9A Datasheet PDF - Fairchild

●The HGTD7N60C3S and HGTP7N60C3 are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25°C and 150°C.

●The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors.

●Features

●• 14A, 600V at TC = 25°C

●• 600V Switching SOA Capability

●• Typical Fall Time. . . . . . . . . . . . . . . . 140ns at TJ = 150°C

●• Short Circuit Rating

●• Low Conduction Loss