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IRF640 Datasheet PDF - ST Microelectronics

Manufacturer:

ST Microelectronics

Category:

MOSFETs

Case Package:

TO-220-3

Description:

Trans MOSFET N-CH 200V 18A 3Pin(3+Tab) TO-220 Tube

Pictures:

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Product Pictures

Documentation:

IRF640 Datasheet (14 Pages)

Package Outline Dimension on10 Page 11 Page 12 Page

IRF640 Datasheet PDF (14 Pages)

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IRF640 Specifications

TYPE

DESCRIPTION

Mounting Style

Through Hole

Number of Pins

3 Pin

Voltage Rating (DC)

200 V

Current Rating

18.0 A

Case/Package

TO-220-3

Drain to Source Resistance (on) (Rds)

180 mΩ

Polarity

N-Channel

Power Dissipation

125W (Tc)

Drain to Source Voltage (Vds)

200 V

Breakdown Voltage (Drain to Source)

200 V

Breakdown Voltage (Gate to Source)

±20.0 V

Continuous Drain Current (Ids)

18.0 A

Rise Time

27 ns

Input Capacitance (Ciss)

1560pF @25V(Vds)

Input Power (Max)

125 W

Fall Time

25 ns

Operating Temperature (Max)

150 ℃

Operating Temperature (Min)

-65 ℃

Power Dissipation (Max)

125W (Tc)

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IRF640 Size & Package

TYPE

DESCRIPTION

Product Lifecycle Status

Unknown

Packaging

Tube

Operating Temperature

150℃ (TJ)

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IRF640 Environmental

IRF640 Documents

IRF640 Datasheet

ST Microelectronics

14 Pages / 0.32 MByte

IRF640 Other Datasheet PDF

ST Microelectronics

2 Pages / 0.09 MByte

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