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Part Datasheet Search > MOSFETs > Infineon > IRF7749L1TRPBF Datasheet PDF
IRF7749L1TRPBF
$ 3.29
IRF7749L1TRPBF Datasheet PDF (10 Pages)
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IRF7749L1TRPBF Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
15 Pin
Case/Package
Direct-FET
Power Rating
3.3 W
Number of Channels
1 Channel
Number of Positions
15 Position
Drain to Source Resistance (on) (Rds)
1.1 mΩ
Polarity
N-Channel
Power Dissipation
125 W
Threshold Voltage
2.9 V
Input Capacitance
12320 pF
Drain to Source Voltage (Vds)
60 V
Breakdown Voltage (Drain to Source)
60 V
Continuous Drain Current (Ids)
33A
Rise Time
43 ns
Input Capacitance (Ciss)
12320pF @25V(Vds)
Input Power (Max)
3.3 W
Fall Time
39 ns
Operating Temperature (Max)
175 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
3.3W (Ta), 125W (Tc)

IRF7749L1TRPBF Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tape & Reel (TR)
Material
Silicon
Size-Length
9.15 mm
Size-Width
7.1 mm
Size-Height
0.49 mm
Operating Temperature
-55℃ ~ 175℃ (TJ)

IRF7749L1TRPBF Documents

Infineon
10 Pages / 0.26 MByte
Infineon
270 Pages / 11.59 MByte
Infineon
44 Pages / 3.69 MByte
Infineon
2 Pages / 0.17 MByte
Infineon
37 Pages / 2.01 MByte
Infineon
3 Pages / 0.19 MByte

IRF7749L1 Documents

Infineon
A 60V Single N-Channel HEXFET Power MOSFET in a DirectFET L8 package rated at 33 amperes optimized with low on resistance.
Infineon
Direct-FET N-CH 60V 33A
International Rectifier
MOSFET N-Ch 60V 1.1mOhm 200NC 2.9V Hexfet
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