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Part Datasheet Search > MOSFETs > International Rectifier > IRF7910TRPBF Datasheet PDF
IRF7910TRPBF
Part 3D Model
$ 0.714
IRF7910TRPBF Datasheet PDF (8 Pages)
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IRF7910TRPBF Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
8 Pin
Case/Package
SOIC-8
Drain to Source Resistance (on) (Rds)
50 mΩ
Polarity
N-Channel
Power Dissipation
2 W
Input Capacitance
1730pF @6V
Drain to Source Voltage (Vds)
12 V
Breakdown Voltage (Drain to Source)
12 V
Input Capacitance (Ciss)
1730pF @6V(Vds)
Input Power (Max)
2 W
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃

IRF7910TRPBF Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Unknown
Packaging
Tape & Reel (TR)
Size-Length
5 mm
Size-Height
1.5 mm
Operating Temperature
-55℃ ~ 150℃

IRF7910TRPBF Documents

International Rectifier
8 Pages / 0.23 MByte
International Rectifier
8 Pages / 0.11 MByte

IRF7910 Documents

International Rectifier
12V Dual N-Channel HEXFET Power MOSFET in a SO-8 package
Infineon
SOIC N-CH 12V 10A
IRF
HEXFET Power MOSFET
Infineon
SOIC N-CH 12V 10A
International Rectifier
MOSFET, Power; Dual N-Ch; VDSS 12V; RDS(ON) 11.5 Milliohms; ID 10A; SO-8; PD 2W; -55deg
Infineon
SOIC N-CH 12V 10A
International Rectifier
Trans MOSFET N-CH 12V 10A 8Pin SOIC Tube
Infineon
SOIC N-CH 12V 10A
Infineon
SOIC N-CH 12V 10A
International Rectifier
Trans MOSFET N-CH 12V 10A 8Pin SOIC T/R
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