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IRFBE20 Datasheet PDF - Vishay Semiconductor

Manufacturer:

Vishay Semiconductor

Category:

MOSFETs

Case Package:

TO-220-3

Description:

Trans MOSFET N-CH 800V 1.8A 3Pin(3+Tab) TO-220AB

Pictures:

3D Model

Symbol

Footprint

Pinout

Product Pictures

Documentation:

IRFBE20 Datasheet (10 Pages)

Package Outline Dimension on8 Page

Part Numbering System on1 Page

IRFBE20 Datasheet PDF (10 Pages)

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IRFBE20 Specifications

TYPE

DESCRIPTION

Mounting Style

Through Hole

Number of Pins

3 Pin

Voltage Rating (DC)

800 V

Current Rating

1.80 A

Case/Package

TO-220-3

Drain to Source Resistance (on) (Rds)

6.50 Ω

Polarity

N-Channel

Power Dissipation

54.0 W

Drain to Source Voltage (Vds)

800 V

Breakdown Voltage (Drain to Source)

800 V

Breakdown Voltage (Gate to Source)

±20.0 V

Continuous Drain Current (Ids)

1.80 A

Rise Time

17.0 ns

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IRFBE20 Size & Package

TYPE

DESCRIPTION

Packaging

Tube

Size-Length

10.41 mm

Size-Width

4.7 mm

Size-Height

15.49 mm

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IRFBE20 Environmental

IRFBE20 Documents

IRFBE20 Datasheet

Vishay Semiconductor

10 Pages / 1.12 MByte

IRFBE20 Other Datasheet PDF

Vishay Semiconductor

9 Pages / 1.11 MByte

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