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IRFBF20PBF Datasheet PDF - Vishay Semiconductor

Manufacturer:

Vishay Semiconductor

Category:

High Voltage MOS

Case Package:

TO-220

Description:

VISHAY IRFBF20PBF Power MOSFET, N Channel, 1.7A, 900V, 8Ω, 10V, 4V

Pictures:

3D Model

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Pinout

Product Pictures

Documentation:

IRFBF20PBF Datasheet (8 Pages)

Part Numbering System on1 Page

IRFBF20PBF Datasheet PDF (8 Pages)

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IRFBF20PBF Specifications

TYPE

DESCRIPTION

Mounting Style

Through Hole

Number of Pins

3 Pin

Case/Package

TO-220

Number of Positions

3 Position

Drain to Source Resistance (on) (Rds)

8 Ω

Polarity

N-Channel

Power Dissipation

54 W

Threshold Voltage

4 V

Drain to Source Voltage (Vds)

900 V

Continuous Drain Current (Ids)

1.70 A

Rise Time

21 ns

Input Capacitance (Ciss)

490pF @25V(Vds)

Fall Time

32 ns

Operating Temperature (Max)

150 ℃

Operating Temperature (Min)

-55 ℃

Power Dissipation (Max)

54 W

View Datasheet >

IRFBF20PBF Size & Package

TYPE

DESCRIPTION

Packaging

Tube

Size-Length

10.41 mm

Size-Width

4.7 mm

Size-Height

9.01 mm

Operating Temperature

-55℃ ~ 150℃

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IRFBF20PBF Environmental

IRFBF20PBF Documents

IRFBF20PBF Datasheet

Vishay Semiconductor

8 Pages / 0.96 MByte

IRFBF20PBF Other Datasheet PDF

Vishay Semiconductor

9 Pages / 1.09 MByte

IRFBF20PBF Notice File

Vishay Semiconductor

3 Pages / 0.14 MByte

IRFBF20 Documents

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IRFBF20PBF Datasheet PDF

Vishay Semiconductor

VISHAY IRFBF20PBF Power MOSFET, N Channel, 1.7A, 900V, 8Ω, 10V, 4V

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