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Part Datasheet Search > MOSFETs > Vishay Siliconix > IRFP21N60LPBF Datasheet PDF
IRFP21N60LPBF
$ 1.566

IRFP21N60LPBF Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Case/Package
TO-247-3
Power Dissipation
330000 mW
Drain to Source Voltage (Vds)
600 V
Rise Time
58 ns
Input Capacitance (Ciss)
4000pF @25V(Vds)
Input Power (Max)
330 W
Fall Time
10 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
55 ℃
Power Dissipation (Max)
330W (Tc)

IRFP21N60LPBF Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tube
Operating Temperature
-55℃ ~ 150℃ (TJ)

IRFP21N60LPBF Documents

Vishay Siliconix
11 Pages / 0.21 MByte
Vishay Siliconix
9 Pages / 0.19 MByte
Vishay Siliconix
1 Pages / 0.12 MByte

IRFP21N60 Documents

VISHAY
TO-247-3 N-CH 600V 21A 320mΩ
Vishay Semiconductor
VISHAY IRFP21N60LPBF Power MOSFET, N Channel, 21A, 600V, 320mohm, 10V, 5V
Vishay Siliconix
MOSFET N-CH 600V 21A TO-247AC
International Rectifier
MOSFET N-CH 600V 21A TO-247AC
International Rectifier
MOSFET N-CH 600V 21A TO-247AC
Vishay Siliconix
MOSFET N-CH 600V 21A TO-247AC
Vishay Semiconductor
Trans MOSFET N-CH 600V 21A 3Pin(3+Tab) TO-247AC
Vishay Intertechnology
Power Field-Effect Transistor, 21A I(D), 600V, 0.32Ω, 1Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC, ROHS COMPLIANT, TO-247AC, 3Pin
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