IRFR540ZPBF Datasheet PDF - International Rectifier

●Description

●This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating

●temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in a wide variety of

●applications.

●Features

●Advanced Process Technology

●Ultra Low On-Resistance

●175°C Operating Temperature

●Fast Switching

●Repetitive Avalanche Allowed up to Tjmax

●Lead-Free

●Halogen-Free