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IRG4PH30KDPBF
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IRG4PH30KDPBF Datasheet PDF (11 Pages)
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IRG4PH30KDPBF Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Voltage Rating (DC)
1.20 kV
Current Rating
20.0 A
Case/Package
TO-247-3
Polarity
N-Channel
Power Dissipation
100 W
Part Family
IRG4PH30KD
Rise Time
79.0 ns
Breakdown Voltage (Collector to Emitter)
1200 V
Reverse recovery time
50 ns
Input Power (Max)
100 W
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃

IRG4PH30KDPBF Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Rail, Tube

IRG4PH30KDPBF Documents

International Rectifier
11 Pages / 0.21 MByte
International Rectifier
11 Pages / 0.46 MByte

IRG4PH30 Documents

IRF
INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, Vce(on)typ.=3.1V, @Vge=15V, Ic=10A)
Infineon
Trans IGBT Chip N-CH 1200V 20A 100000mW 3Pin(3+Tab) TO-247AC Tube
Infineon
Trans IGBT Chip N-CH 1200V 20A 100000mW 3Pin(3+Tab) TO-247AC Tube
International Rectifier
INTERNATIONAL RECTIFIER IRG4PH30KPBF IGBT Single Transistor, 20A, 3.1V, 100W, 1.2kV, TO-247AC, 3Pins
International Rectifier
Trans IGBT Chip N-CH 1.2kV 20A 3Pin(3+Tab) TO-247AC
International Rectifier
IGBT 1200V 20A 100W TO247AC
International Rectifier
IGBT 1200V 20A 100W TO247AC
Infineon
Trans IGBT Chip N-CH 1.2kV 20A 3Pin(3+Tab) TO-247AC
Infineon
Trans IGBT Chip N-CH 1.2kV 20A 3Pin (3+Tab) TO-247AC
IRF
INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, Vce(on)typ.=3.1V, @Vge=15V, Ic=10A)
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