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IRLU014NPBF
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IRLU014NPBF Datasheet PDF (10 Pages)
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IRLU014NPBF Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Voltage Rating (DC)
55.0 V
Current Rating
10.0 A
Case/Package
TO-251-3
Drain to Source Resistance (on) (Rds)
0.21 Ω
Polarity
N-Channel
Power Dissipation
28 W
Part Family
IRLU014N
Input Capacitance
265pF @25V
Drain to Source Voltage (Vds)
55 V
Breakdown Voltage (Drain to Source)
55.0 V
Continuous Drain Current (Ids)
10.0 A
Rise Time
47.0 ns
Input Capacitance (Ciss)
265pF @25V(Vds)
Input Power (Max)
28 W
Operating Temperature (Max)
175 ℃
Operating Temperature (Min)
-55 ℃

IRLU014NPBF Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Unknown
Packaging
Tube
Size-Length
6.73 mm
Size-Height
6.22 mm
Operating Temperature
-55℃ ~ 175℃

IRLU014NPBF Documents

International Rectifier
10 Pages / 0.28 MByte

IRLU014 Documents

VISHAY
TO-251-3 N-CH 60V 7.7A 200mΩ
Vishay Siliconix
MOSFET N-CH 60V 7.7A I-PAK
Vishay Semiconductor
Trans MOSFET N-CH 60V 7.7A 3Pin(3+Tab) IPAK
International Rectifier
Vishay Intertechnology
Power Field-Effect Transistor, 7.7A I(D), 60V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA, IPAK-3
Samsung
Power Field-Effect Transistor, 6.7A I(D), 60V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, IPAK-3
VISHAY
TO-251-3 N-CH 60V 7.7A 200mΩ
Vishay Siliconix
MOSFET N-CH 60V 7.7A I-PAK
Vishay Semiconductor
MOSFET, Power; N-Ch; VDSS 60V; RDS(ON) 0.2Ω; ID 7.7A; TO-251AA; PD 2.5W; VGS +/-10V
International Rectifier
Trans MOSFET N-CH 55V 10A 3Pin(3+Tab) IPAK
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