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Part Datasheet Search > MOSFETs > IXYS Semiconductor > IXFN34N100 Datasheet PDF
IXFN34N100
$ 46.821

IXFN34N100 Specifications

TYPE
DESCRIPTION
Mounting Style
Chassis
Case/Package
SOT-227-4
Number of Channels
1 Channel
Drain to Source Resistance (on) (Rds)
280 mΩ
Polarity
N-CH
Power Dissipation
700 W
Drain to Source Voltage (Vds)
1000 V
Breakdown Voltage (Drain to Source)
1000 V
Continuous Drain Current (Ids)
34A
Rise Time
65 ns
Input Capacitance (Ciss)
9200pF @25V(Vds)
Input Power (Max)
700 W
Fall Time
30 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
55 ℃
Power Dissipation (Max)
700W (Tc)

IXFN34N100 Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Not Recommended for New Designs
Packaging
Tube
Size-Length
38.2 mm
Size-Width
25.07 mm
Size-Height
9.6 mm
Operating Temperature
-55℃ ~ 150℃ (TJ)

IXFN34N100 Documents

IXYS Semiconductor
4 Pages / 0.56 MByte
IXYS Semiconductor
4 Pages / 0.55 MByte

IXFN34 Documents

IXYS Semiconductor
SOT-227B N-CH 70V 340A
IXYS Semiconductor
SOT-227B N-CH 1000V 34A
IXYS Semiconductor
SOT-227B N-CH 800V 34A
IXYS Semiconductor
SOT-227B N-CH 60V 340A
IXYS Semiconductor
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