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IXTN200N10T Datasheet PDF - IXYS Semiconductor

Manufacturer:

IXYS Semiconductor

Category:

MOSFETs

Case Package:

SOT-227-4

Description:

MOSFET N-CH 100V 200A SOT-227

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Documentation:

IXTN200N10T Datasheet (6 Pages)

IXTN200N10T Datasheet PDF (6 Pages)

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IXTN200N10T Specifications

TYPE

DESCRIPTION

Mounting Style

Surface Mount

Number of Pins

4 Pin

Case/Package

SOT-227-4

Number of Channels

1 Channel

Power Dissipation

550 W

Drain to Source Voltage (Vds)

100 V

Input Capacitance (Ciss)

9400pF @25V(Vds)

Power Dissipation (Max)

550W (Tc)

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IXTN200N10T Size & Package

TYPE

DESCRIPTION

Product Lifecycle Status

Active

Packaging

Tube

Size-Width

25.07 mm

Operating Temperature

-55℃ ~ 175℃ (TJ)

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IXTN200N10T Environmental

IXTN200N10T Function Overview

IXTN200N10T Documents

IXTN200N10T Datasheet

IXYS Semiconductor

6 Pages / 0.16 MByte

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IXTN200N10T Datasheet PDF

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MOSFET N-CH 100V 200A SOT-227

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