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Part Datasheet Search > MOSFETs > IXYS Semiconductor > IXFX200N10P Datasheet PDF
IXFX200N10P
$ 15.039
IXFX200N10P Datasheet PDF (5 Pages)
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IXFX200N10P Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Case/Package
TO-247-3
Number of Channels
1 Channel
Drain to Source Resistance (on) (Rds)
7.5 mΩ
Power Dissipation
830 W
Drain to Source Voltage (Vds)
100 V
Breakdown Voltage (Drain to Source)
100 V
Rise Time
35 ns
Input Capacitance (Ciss)
7600pF @25V(Vds)
Input Power (Max)
830 W
Fall Time
90 ns
Operating Temperature (Max)
175 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
830W (Tc)

IXFX200N10P Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tube
Size-Length
16.13 mm
Size-Width
5.21 mm
Size-Height
21.34 mm
Operating Temperature
-55℃ ~ 175℃ (TJ)

IXFX200N10P Documents

IXYS Semiconductor
5 Pages / 0.11 MByte

IXFX200N10 Documents

IXYS Semiconductor
Single N-Channel 100V 830W 235NC Through Hole Power Mosfet - TO-264
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