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Part Datasheet Search > IGBTs > IXYS Semiconductor > IXGH72N60B3 Datasheet PDF
IXGH72N60B3
$ 6.059
IXGH72N60B3 Datasheet PDF (4 Pages)
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IXGH72N60B3 Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Case/Package
TO-247-3
Number of Positions
3 Position
Power Dissipation
540 W
Breakdown Voltage (Collector to Emitter)
600 V
Input Power (Max)
540 W
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
540 W

IXGH72N60B3 Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Obsolete
Packaging
Tube
Size-Length
16.26 mm
Size-Width
5.3 mm
Size-Height
21.46 mm
Operating Temperature
-55℃ ~ 150℃ (TJ)

IXGH72N60B3 Documents

IXYS Semiconductor
4 Pages / 0.82 MByte
IXYS Semiconductor
2 Pages / 0.09 MByte

IXGH72N60 Documents

IXYS Semiconductor
Trans IGBT Chip N-CH 600V 78A 540000mW 3Pin(3+Tab) TO-247AD
IXYS Semiconductor
Trans IGBT Chip N-CH 600V 75A 540000mW 3Pin(3+Tab) TO-247
IXYS Semiconductor
Trans IGBT Chip N-CH 600V 75A 540000mW 3Pin(3+Tab) TO-247AD
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