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Part Datasheet Search > BJTs > ON Semiconductor > MJE18008G Datasheet PDF
MJE18008G
$ 1.634
MJE18008G Datasheet PDF (20 Pages)
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MJE18008G Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Frequency
13 MHz
Number of Pins
3 Pin
Voltage Rating (DC)
450 V
Current Rating
8.00 A
Case/Package
TO-220-3
Number of Positions
3 Position
Polarity
NPN
Power Dissipation
125 W
Gain Bandwidth Product
13 MHz
Breakdown Voltage (Collector to Emitter)
450 V
Continuous Collector Current
8A
hFE Min
14 @1A, 5V
Input Power (Max)
125 W
DC Current Gain (hFE)
34
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-65 ℃
Power Dissipation (Max)
125 W

MJE18008G Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tube
Size-Length
10.28 mm
Size-Width
4.83 mm
Size-Height
15.75 mm
Operating Temperature
-65℃ ~ 150℃ (TJ)

MJE18008G Documents

ON Semiconductor
20 Pages / 0.89 MByte
ON Semiconductor
10 Pages / 0.19 MByte
ON Semiconductor
2 Pages / 0.02 MByte
ON Semiconductor
11 Pages / 0.14 MByte
ON Semiconductor
5 Pages / 0.15 MByte
ON Semiconductor
1 Pages / 0.13 MByte

MJE18008 Documents

ON Semiconductor
TO-220-3 NPN 450V 8A
New Jersey Semiconductor
Trans GP BJT NPN 450V 8A 3Pin(3+Tab) TO-220AB Rail
Motorola
POWER TRANSISTOR 8.0 AMPERES 1000 VOLTS 45 and 125W
Inchange Semiconductor
Transistor
ON Semiconductor
TO-220AB NPN 450V 8A
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