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Part Datasheet Search > Transistors > NXP > MRF1513NT1 Datasheet PDF
MRF1513NT1
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MRF1513NT1 Datasheet PDF (7 Pages)
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MRF1513NT1 Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Frequency
520 MHz
Number of Pins
3 Pin
Current Rating
2 A
Case/Package
PLD-1
Halogen Free Status
Halogen Free
Number of Positions
3 Position
Polarity
N-Channel
Power Dissipation
31.25 W
Drain to Source Voltage (Vds)
40 V
Continuous Drain Current (Ids)
2.00 A
Output Power
3 W
Gain
15 dB
Test Current
50 mA
Input Capacitance (Ciss)
33pF @12.5V(Vds)
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-65 ℃
Power Dissipation (Max)
31250 mW
Voltage Rating
40 V

MRF1513NT1 Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tape & Reel (TR)
Weight
280.0 mg
Operating Temperature
-65℃ ~ 150℃

MRF1513NT1 Documents

NXP
7 Pages / 0.16 MByte
NXP
30 Pages / 0.29 MByte
NXP
16 Pages / 0.51 MByte
NXP
1 Pages / 0.21 MByte

MRF1513 Documents

NXP
* Specified Performance @ 520MHz, 12.5 Volts Output Power: 3W Power Gain: 15dB Efficiency: 65% * Capable of Handling 20:1 VSWR, @ 15.5VDC, 520MHz, 2dB Overdrive * Excellent Thermal Stability * Characterized with Series Equivalent Large–Signal Impedance Parameters * N Suffix Indicates Lead-Free Terminations. RoHS Compliant. * In Tape and Reel. T1 Suffix = 1,000 Units per 12mm, 7Inch Reel.
Freescale
Trans RF MOSFET N-CH 40V 2A 3Pin PLD-1.5 T/R
NXP
Lateral N-Channel Broadband RF Power MOSFET, 520MHz, 3W, 12.5V
Motorola
RF POWER FIELD EFFECT TRANSISTORS N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFET
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