MRF1513NT1

$ 4.09

MRF1513NT1 Application Note - NXP

Manufacturer:

NXP

Category:

Transistors

Case Package:

PLD-1

Description:

* Specified Performance @ 520MHz, 12.5 Volts Output Power: 3W Power Gain: 15dB Efficiency: 65% * Capable of Handling 20:1 VSWR, @ 15.5VDC, 520MHz, 2dB Overdrive * Excellent Thermal Stability * Characterized with Series Equivalent Large–Signal Impedance Parameters * N Suffix Indicates Lead-Free Terminations. RoHS Compliant. * In Tape and Reel. T1 Suffix = 1,000 Units per 12mm, 7Inch Reel.

Pictures:

3D Model

Symbol

Footprint

Pinout

Product Pictures

Pages guide:

Package Outline Dimension onP14

Packaging Infomation onP1

Specifications onP1

Application Area onP12

Electrical Specification onP2

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MRF1513NT1 Documents

MRF1513NT1 Datasheet

NXP

7 Pages / 0.16 MByte

MRF1513NT1 Other Datasheet PDF

NXP

30 Pages / 0.29 MByte

MRF1513NT1 Application Note

NXP

16 Pages / 0.51 MByte

MRF1513NT1 Other References

NXP

1 Pages / 0.21 MByte

MRF1513 Documents

MRF1513NT1 Datasheet PDF

NXP

* Specified Performance @ 520MHz, 12.5 Volts Output Power: 3W Power Gain: 15dB Efficiency: 65% * Capable of Handling 20:1 VSWR, @ 15.5VDC, 520MHz, 2dB Overdrive * Excellent Thermal Stability * Characterized with Series Equivalent Large–Signal Impedance Parameters * N Suffix Indicates Lead-Free Terminations. RoHS Compliant. * In Tape and Reel. T1 Suffix = 1,000 Units per 12mm, 7Inch Reel.

MRF1513NT1 Datasheet PDF

Freescale

Trans RF MOSFET N-CH 40V 2A 3Pin PLD-1.5 T/R

MRF1513N Datasheet PDF

NXP

Lateral N-Channel Broadband RF Power MOSFET, 520MHz, 3W, 12.5V

MRF1513T1 Datasheet PDF

Motorola

RF POWER FIELD EFFECT TRANSISTORS N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFET

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