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Part Datasheet Search > BJTs > California Eastern Laboratories > NESG250134-T1-AZ Datasheet PDF
NESG250134-T1-AZ
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NESG250134-T1-AZ Datasheet PDF (14 Pages)
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NESG250134-T1-AZ Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
4 Pin
Case/Package
TO-243
Power Dissipation
1.5 W
Breakdown Voltage (Collector to Emitter)
9.2 V
Gain
23 dB
hFE Min
80 @100mA, 3V
Input Power (Max)
1.5 W

NESG250134-T1-AZ Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Obsolete
Packaging
Tape & Reel (TR)

NESG250134-T1-AZ Documents

California Eastern Laboratories
14 Pages / 1.13 MByte
California Eastern Laboratories
15 Pages / 1.25 MByte

NESG250134T1 Documents

Renesas Electronics
UHF BAND, SiGe, NPN, RF SMALL SIGNAL TRANSISTOR, LEAD FREE, POWER, MINIMOLD, 34, 3Pin
California Eastern Laboratories
Trans RF BJT NPN 9.2V 0.5A 4Pin(3+Tab) Mini-Mold T/R
California Eastern Laboratories
Trans RF BJT NPN 9.2V 0.5A 4Pin(3+Tab) Mini-Mold T/R
Renesas Electronics
UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, LEAD FREE, MINIMOLD PACKAGE-3
California Eastern Laboratories
Trans RF BJT NPN 9.2V 0.5A 4Pin(3+Tab) Mini-Mold T/R
NEC
RF Small Signal Bipolar Transistor, 0.5A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN, MINIMOLD PACKAGE-3
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