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NTA4001NT1
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NTA4001NT1 Datasheet PDF (5 Pages)
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NTA4001NT1 Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
3 Pin
Voltage Rating (DC)
20.0 V
Current Rating
238 mA
Case/Package
SOT-416
Drain to Source Resistance (on) (Rds)
2.20 Ω
Polarity
N-Channel
Power Dissipation
300 mW
Drain to Source Voltage (Vds)
20 V
Breakdown Voltage (Drain to Source)
20.0 V
Breakdown Voltage (Gate to Source)
±10.0 V
Continuous Drain Current (Ids)
238 mA
Rise Time
15.0 ns
Input Capacitance (Ciss)
20pF @5V(Vds)
Input Power (Max)
300 mW
Power Dissipation (Max)
300 mW

NTA4001NT1 Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Unknown
Packaging
Bulk
Operating Temperature
-55℃ ~ 150℃ (TJ)

NTA4001NT1 Documents

ON Semiconductor
5 Pages / 0.12 MByte
ON Semiconductor
26 Pages / 0.08 MByte

NTA4001 Documents

ON Semiconductor
Small Signal MOSFET 20V 238mA 1.5Ω Single N-Channel SC-75 with ESD Protection, SC-75 (SOT-416) 3 LEAD, 3000-REEL
ON Semiconductor
Trans MOSFET N-CH 20V 0.238A 3Pin SOT-416 T/R
ON Semiconductor
SC-75-3 N-CH 20V 0.238A 3000mΩ
Leshan Radio
Small Signal Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,
Leshan Radio
Small Signal Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,
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