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SI4946CDY-T1-GE3 Datasheet PDF - VISHAY

Manufacturer:

VISHAY

Case Package:

SOIC

Description:

Dual N-Channel 60 V (D-S) MOSFET

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3D Model

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Documentation:

SI4946CDY-T1-GE3 Datasheet (9 Pages)

SI4946CDY-T1-GE3 Specifications

TYPE

DESCRIPTION

Number of Pins

8 Pin

Case/Package

SOIC

Number of Positions

8 Position

Drain to Source Resistance (on) (Rds)

0.033 Ω

Power Dissipation

2 W

Threshold Voltage

3 V

Drain to Source Voltage (Vds)

60 V

Input Capacitance (Ciss)

350pF @30V(Vds)

Operating Temperature (Max)

150 ℃

Operating Temperature (Min)

-55 ℃

Power Dissipation (Max)

2000 mW

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SI4946CDY-T1-GE3 Size & Package

TYPE

DESCRIPTION

Packaging

Tape & Reel (TR)

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SI4946CDY-T1-GE3 Environmental

SI4946CDY-T1-GE3 Function Overview

SI4946CDY-T1-GE3 Documents

SI4946CDY-T1-GE3 Datasheet

VISHAY

9 Pages / 0.22 MByte

SI4946CDYT1 Documents

SI4946CDY-T1-GE3 Datasheet PDF

VISHAY

Dual N-Channel 60 V (D-S) MOSFET

SI4946CDY-T1-GE3 Datasheet PDF

Vishay Siliconix

MOSFET N-CHAN DUAL 60V SO-8

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