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Part Datasheet Search > Transistors > Nexperia > PMDT670UPE,115 Datasheet PDF
PMDT670UPE,115
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PMDT670UPE,115 Datasheet PDF (17 Pages)
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PMDT670UPE,115 Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
6 Pin
Case/Package
SOT-666
Number of Positions
6 Position
Drain to Source Resistance (on) (Rds)
0.67 Ω
Power Dissipation
500 mW
Threshold Voltage
800 mV
Input Capacitance
58 pF
Drain to Source Voltage (Vds)
20 V
Rise Time
30 ns
Input Capacitance (Ciss)
87pF @10V(Vds)
Input Power (Max)
330 mW
Fall Time
72 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
390 mW

PMDT670UPE,115 Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tape & Reel (TR)
Operating Temperature
-55℃ ~ 150℃ (TJ)

PMDT670UPE,115 Documents

Nexperia
17 Pages / 0.45 MByte

PMDT670 Documents

Nexperia
MOSFET 2P-CH 20V 0.55A SOT666
NXP
NXP PMDT670UPE Dual MOSFET, Dual P Channel, -550mA, -20V, 0.67Ω, -4.5V, -800mV
NXP
SOT-666P-CH 20V 0.55A
NXP
Trans MOSFET P-CH 20V 0.55A 6Pin SOT-666 T/R
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