TCDT1103G Datasheet PDF - Vishay Semiconductor

●DESCRIPTION

●The TCDT1100/TCDT1100G series consists of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in a 6-pin plastic dual inline package. The base of the phototransistor is not connected providing noise immunity. The elements are mounted on one leadframe which providing a fixed distance between input and output for highest safety requirements.

●FEATURES

●• Isolation test voltage 5300 VRMS

●• Extra low coupling capacity - typical 0.2 pF

●• High common mode rejection

●• No base terminal connection for improved noise immunity

●• CTR offered in 4 groups

●• Thickness though insulation ≥0.75 mm

●• Creepage current resistance according to VDE 0303/ IEC 60112 comparative tracking index: CTI ≥275

●• Lead (Pb)-free component

●• Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC