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Part Datasheet Search > MOSFETs > ON Semiconductor > RFP12N10L Datasheet PDF
RFP12N10L
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RFP12N10L Datasheet PDF (6 Pages)
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RFP12N10L Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Case/Package
TO-220-3
Number of Positions
3 Position
Drain to Source Resistance (on) (Rds)
0.2 Ω
Power Dissipation
60 W
Threshold Voltage
2 V
Drain to Source Voltage (Vds)
100 V
Rise Time
70 ns
Input Capacitance (Ciss)
900pF @25V(Vds)
Input Power (Max)
60 W
Fall Time
80 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
60000 mW

RFP12N10L Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Rail, Tube
Material
Silicon
Size-Length
10.67 mm
Size-Width
4.83 mm
Size-Height
9.4 mm

RFP12N10L Documents

ON Semiconductor
6 Pages / 0.59 MByte
ON Semiconductor
18 Pages / 1.07 MByte
ON Semiconductor
1 Pages / 0.09 MByte
ON Semiconductor
29 Pages / 1.96 MByte

RFP12N10 Documents

Intersil
TO-220AB N-CH 100V 12A
Harris
MOSFET N-CH 100V 12A TO-220AB
Fairchild
N-Channel Logic Level Power MOSFET 100V, 12A, 200mΩ, TO-220, MOLDED, 3LEAD, JEDEC VARIATION AB, 800/RAIL
ON Semiconductor
N-Channel Logic Level Power MOSFET 100V, 12A, 200mΩ, 800-TUBE
New Jersey Semiconductor
Trans MOSFET N-CH 100V 12A 3Pin(3+Tab) TO-220AB
Fairchild
Trans MOSFET N-CH 100V 12A 3Pin(3+Tab) TO-220AB Rail
ON Semiconductor
Trans MOSFET N-CH Si 100V 12A Automotive 3Pin(3+Tab) TO-220AB Rail
Intersil
MOSFET N-CH 100V 12A TO-220AB
Harris
Power Field-Effect Transistor, 12A I(D), 100V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
New Jersey Semiconductor
Trans MOSFET N-CH 100V 12A 3Pin(3+Tab) TO-220AB Railf
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