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RQ3E150MNTB1 Datasheet PDF - ROHM Semiconductor

Manufacturer:

ROHM Semiconductor

Category:

MOSFETs

Case Package:

HSMT-8

Description:

HSMT N-CH 30V 15A

Pictures:

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Product Pictures

Documentation:

RQ3E150MNTB1 Datasheet (11 Pages)

RQ3E150MNTB1 Datasheet PDF (11 Pages)

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RQ3E150MNTB1 Specifications

TYPE

DESCRIPTION

Mounting Style

Surface Mount

Case/Package

HSMT-8

Polarity

N-CH

Power Dissipation

2 W

Drain to Source Voltage (Vds)

30 V

Continuous Drain Current (Ids)

15A

Rise Time

13 ns

Input Capacitance (Ciss)

1100pF @15V(Vds)

Fall Time

40 ns

Power Dissipation (Max)

2W (Ta)

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RQ3E150MNTB1 Size & Package

TYPE

DESCRIPTION

Product Lifecycle Status

Not For New Designs

Packaging

Tape & Reel (TR)

Operating Temperature

150℃ (TJ)

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RQ3E150MNTB1 Environmental

RQ3E150MNTB1 Function Overview

RQ3E150MNTB1 Documents

RQ3E150MNTB1 Datasheet

ROHM Semiconductor

11 Pages / 1.11 MByte

RQ3E150MNTB1 Other Datasheet PDF

ROHM Semiconductor

12 Pages / 0.43 MByte

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RQ3E150MNTB1 Datasheet PDF

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HSMT N-CH 30V 15A

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