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SI1012R-T1-GE3 Datasheet PDF - Vishay Semiconductor

Manufacturer:

Vishay Semiconductor

Category:

MOSFETs

Case Package:

SC-75-3

Description:

MOSFET 20V 0.6A 175mW 700mohm @ 4.5V

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Documentation:

SI1012R-T1-GE3 Datasheet (10 Pages)

SI1012R-T1-GE3 Datasheet PDF (10 Pages)

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SI1012R-T1-GE3 Specifications

TYPE

DESCRIPTION

Mounting Style

Surface Mount

Number of Pins

3 Pin

Case/Package

SC-75-3

Number of Positions

3 Position

Drain to Source Resistance (on) (Rds)

0.41 Ω

Polarity

N-Channel

Power Dissipation

150 mW

Threshold Voltage

900 mV

Drain to Source Voltage (Vds)

20 V

Continuous Drain Current (Ids)

600 mA

Rise Time

5 ns

Fall Time

11 ns

Operating Temperature (Max)

150 ℃

Operating Temperature (Min)

-55 ℃

Power Dissipation (Max)

150 mW

View Datasheet >

SI1012R-T1-GE3 Size & Package

TYPE

DESCRIPTION

Packaging

Tape & Reel (TR)

Size-Length

1.575 mm

Size-Width

0.76 mm

Size-Height

0.7 mm

Operating Temperature

-55℃ ~ 150℃

View Datasheet >

SI1012R-T1-GE3 Environmental

SI1012R-T1-GE3 Export Classifications

SI1012R-T1-GE3 Function Overview

SI1012R-T1-GE3 Documents

SI1012R-T1-GE3 Datasheet

Vishay Semiconductor

10 Pages / 0.22 MByte

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SI1012R-T1-GE3 Datasheet PDF

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