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SI3460DDV-T1-GE3 Datasheet PDF - VISHAY

Manufacturer:

VISHAY

Category:

MOSFETs

Case Package:

TSOP-6

Description:

TSOP-6 N-CH 20V 7.9A 23mΩ

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Documentation:

SI3460DDV-T1-GE3 Datasheet (11 Pages)

Package Outline Dimension on7 Page

Part Numbering System on1 Page

SI3460DDV-T1-GE3 Datasheet PDF (11 Pages)

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SI3460DDV-T1-GE3 Specifications

TYPE

DESCRIPTION

Mounting Style

Surface Mount

Number of Pins

6 Pin

Case/Package

TSOP-6

Number of Positions

6 Position

Drain to Source Resistance (on) (Rds)

0.023 Ω

Polarity

N-Channel

Power Dissipation

1.7 W

Threshold Voltage

400 mV

Drain to Source Voltage (Vds)

20 V

Continuous Drain Current (Ids)

7.9A

Input Capacitance (Ciss)

666pF @10V(Vds)

Input Power (Max)

2.7 W

Fall Time

8 ns

Operating Temperature (Max)

150 ℃

Operating Temperature (Min)

-55 ℃

Power Dissipation (Max)

1.7W (Ta), 2.7W (Tc)

View Datasheet >

SI3460DDV-T1-GE3 Size & Package

TYPE

DESCRIPTION

Product Lifecycle Status

Active

Packaging

Tape & Reel (TR)

Size-Length

3.1 mm

Size-Width

1.7 mm

Size-Height

1 mm

Operating Temperature

-55℃ ~ 150℃ (TJ)

Minimum Packing Quantity

3000

View Datasheet >

SI3460DDV-T1-GE3 Environmental

SI3460DDV-T1-GE3 Function Overview

SI3460DDV-T1-GE3 Documents

SI3460DDV-T1-GE3 Datasheet

VISHAY

11 Pages / 0.7 MByte

SI3460DDV-T1-GE3 Other Datasheet PDF

VISHAY

7 Pages / 0.59 MByte

SI3460DDVT1 Documents

SI3460DDV-T1-GE3 Datasheet PDF

VISHAY

TSOP-6 N-CH 20V 7.9A 23mΩ

SI3460DDV-T1-GE3 Datasheet PDF

Vishay Semiconductor

Trans MOSFET N-CH 20V 6.2A 6Pin TSOP T/R

SI3460DDV-T1-GE3 Datasheet PDF

Vishay Siliconix

VISHAY SI3460DDV-T1-GE3 MOSFET Transistor, N Channel, 7.9A, 20V, 0.023Ω, 4.5V, 400mV

SI3460DDV-T1-GE3 Datasheet PDF

Vishay Intertechnology

Small Signal Field-Effect Transistor, 7.9A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-193AA, HALOGEN FREE AND ROHS COMPLIANT, MO-193C, TSOP-6

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