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Part Datasheet Search > MOSFETs > Vishay Siliconix > SI1012X-T1-GE3 Datasheet PDF
SI1012X-T1-GE3
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SI1012X-T1-GE3 Datasheet PDF (10 Pages)
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SI1012X-T1-GE3 Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
3 Pin
Case/Package
SC-89-3
Drain to Source Resistance (on) (Rds)
1.25 Ω
Polarity
N-Channel
Power Dissipation
250 mW
Drain to Source Voltage (Vds)
20 V
Continuous Drain Current (Ids)
600 mA
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
250mW (Ta)

SI1012X-T1-GE3 Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Not Recommended
Packaging
Tape & Reel (TR)
Size-Length
1.7 mm
Size-Height
0.8 mm
Operating Temperature
-55℃ ~ 150℃

SI1012X-T1-GE3 Documents

Vishay Siliconix
10 Pages / 0.19 MByte
Vishay Siliconix
10 Pages / 0.22 MByte

SI1012XT1 Documents

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MOSFET 20V 0.6A
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MOSFET Small Signal 20V 0.6A
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SC-89-3 N-CH 20V 600mA 700mΩ
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MOSFET, Power; N-Ch; VDSS 20V; RDS(ON) 0.41Ω; ID 500mA; SC-89 (SOT-490); Halogeenfree
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MOSFET, Power; N-Ch; VDSS 20V; RDS(ON) 0.41Ω; ID 500mA; SC-89 (SOT-490); Halogeenfree
Vishay Siliconix
MOSFET, Power; N-Ch; VDSS 20V; RDS(ON) 0.41Ω; ID 500mA; SC-89 (SOT-490); PD 0.25W(1/4W)
Vishay Semiconductor
MOSFET, Power; N-Ch; VDSS 20V; RDS(ON) 0.41Ω; ID 500mA; SC-89 (SOT-490); PD 0.25W(1/4W)
VISHAY
MOSFET N-CH 20V 500mA SC89-3
Vishay Intertechnology
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