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SI2308DS-T1-E3 Datasheet PDF - VISHAY

Manufacturer:

VISHAY

Category:

MOSFETs

Case Package:

SOT-23

Description:

Trans MOSFET N-CH Si 60V 2A 3Pin SOT-23 T/R

Pictures:

3D Model

Symbol

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Product Pictures

Documentation:

SI2308DS-T1-E3 Datasheet (5 Pages)

SI2308DS-T1-E3 Datasheet PDF (5 Pages)

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SI2308DS-T1-E3 Specifications

TYPE

DESCRIPTION

Mounting Style

Surface Mount

Number of Pins

3 Pin

Case/Package

SOT-23

Drain to Source Resistance (on) (Rds)

160 mΩ

Polarity

N-Channel

Power Dissipation

1.25 W

Drain to Source Voltage (Vds)

60 V

Breakdown Voltage (Drain to Source)

60.0 V

Breakdown Voltage (Gate to Source)

±20.0 V

Continuous Drain Current (Ids)

2.00 A

Input Capacitance (Ciss)

240pF @25V(Vds)

Input Power (Max)

1.25 W

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SI2308DS-T1-E3 Size & Package

TYPE

DESCRIPTION

Packaging

Tape & Reel (TR)

Operating Temperature

-55℃ ~ 150℃ (TJ)

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SI2308DS-T1-E3 Environmental

SI2308DS-T1-E3 Function Overview

SI2308DS-T1-E3 Documents

SI2308DS-T1-E3 Datasheet

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5 Pages / 0.08 MByte

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