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Part Datasheet Search > MOSFETs > Vishay Semiconductor > SI2309DS-T1-E3 Datasheet PDF
SI2309DS-T1-E3
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SI2309DS-T1-E3 Datasheet PDF (5 Pages)
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SI2309DS-T1-E3 Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Case/Package
SOT-23
Drain to Source Resistance (on) (Rds)
0.275 Ω
Polarity
P-Channel
Power Dissipation
1.25 W
Drain to Source Voltage (Vds)
-60.0 V
Breakdown Voltage (Gate to Source)
±20.0 V
Continuous Drain Current (Ids)
-1.25 A
Rise Time
11.5 ns
Fall Time
7.5 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃

SI2309DS-T1-E3 Size & Package

TYPE
DESCRIPTION
Packaging
Tape & Reel (TR)
Operating Temperature
-55℃ ~ 150℃

SI2309DS-T1-E3 Documents

Vishay Semiconductor
5 Pages / 0.07 MByte
Vishay Semiconductor
5 Pages / 0.07 MByte

SI2309DST1 Documents

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MOSFET 60V 1.25A
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Small Signal Field-Effect Transistor, 0.00125A I(D), 60V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236
VISHAY
SOT-23P-CH 60V 1.25A
VISHAY
MOSFET 60V 1.6A 1.7W 345mohm @ 10V
Vishay Semiconductor
MOSFET, Power; P-Ch; VDSS -60V; RDS(ON) 0.275Ω; ID -1.25A; TO-236 (SOT-23); PD 1.25W
Vishay Siliconix
MOSFET, Power; P-Ch; VDSS -60V; RDS(ON) 0.275Ω; ID -1.25A; TO-236 (SOT-23); PD 1.25W
Vishay Siliconix
MOSFET 60V 1.25A 1.25W 340mohm @ 10V
Vishay Semiconductor
Trans MOSFET P-CH 60V 1.25A 3Pin SOT-23 T/R
VISHAY
SOT-23P-CH 60V 1.25A
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